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 April 1995
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID PD TJ,TSTG TL Parameter Drain-Source Voltage
T A = 25C unless otherwise noted
BS170 60 60 20 500 1200 830 6.6 -55 to 150 300
MMBF170
Units V V V
Drain-Gate Voltage (RGS < 1M) Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
500 800 300 2.4
mA
mW mW/C C C
THERMAL CHARACTERISTICS RJA Thermal Resistacne, Junction-to-Ambient 150 417 C/W
(c) 1997 Fairchild Semiconductor Corporation
BS170 Rev. C / MMBF170 Rev. D
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF VGS(th) RDS(ON) gFS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward VGS = 0 V, ID = 100 A VDS = 25 V, VGS = 0 V VGS = 15 V, VDS = 0 V VDS = VGS, ID = 1 mA VGS = 10 V, ID = 200 mA VDS = 10 V, ID = 200 mA VDS > 2 VDS(on), ID = 200 mA DYNAMIC CHARACTERISTICS Ciss Coss Crss ton Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz All All All 24 17 7 40 30 10 pF pF pF All All All 60 0.5 10 V A nA
ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance All All BS170 MMBF170 0.8 2.1 1.2 320 320 3 5 V
mS
SWITCHING CHARACTERISTICS (Note 1) Turn-On Time VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 toff Turn-Off Time VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50
Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
BS170 MMBF170 BS170 MMBF170
10 10 10 10
ns
ns
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics
BS170 / MMBF170
2
3
VGS = 10V
, DRAIN-SOURCE CURRENT (A) 1.5
9.0
8.0
DRAIN-SOURCE ON-RESISTANCE
V GS =4.0V
4.5 5.0 6 .0
7.0 6.0
1 RDS(on) , NORMALIZED
2.5
2
7.0
1.5
5.0
0.5
8.0 9.0 10
4.0 3.0
0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5
1
I 0
D
0.5 0 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2
3
V G S = 10V
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.75
V GS = 10V
2.5
ID = 500mA
R DS(on) , NORMALIZED
R DS(ON) , NORMALIZED
1.5
2
TJ = 125C
1.25
1.5
25C
1
1
-55C
0.5
0.75
0.5 -50
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J
125
150
0 0 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
2 GATE-SOURCE THRESHOLD VOLTAGE
1.1
VDS = 10V
1.6 ID , DRAIN CURRENT (A)
T J = -55C
25C
125C
Vth , NORMALIZED
1.05
V DS = VGS I D = 1 mA
1
1.2
0.95
0.8
0.9
0.4
0.85
0 0 2 V
GS
4 6 8 , GATE TO SOURCE VOLTAGE (V)
10
0.8 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics (continued)
BS170 / MMBF170
1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE 2
ID = 100A
1.075 1.05 1.025 1 0.975 0.95 0.925 -50 IS , REVERSE DRAIN CURRENT (A)
1 0.5
V GS = 0V
, NORMALIZED
TJ = 125C
0.1 0.05
25C -55C
BV
DSS
0.01 0.005
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
0.001 0.2
0.4 V SD
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
60 40 V GS , GATE-SOURCE VOLTAGE (V)
10
C iss
20 CAPACITANCE (pF)
ID = 5 0 0 m A
8
V DS = 25V
C oss
10
6
5
C rss f = 1 MHz V GS = 0V
1 2 V DS 3 5 10 20 30 50
4
2
2
1 , DRAIN TO SOURCE VOLTAGE (V)
0 0 0.4 0.8 1.2 1.6 2 Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics (continued)
3 2 1
Lim it
10
( DS ) ON
3 2
0u
s
I D , DRAIN CURRENT (A)
10
1 0.5
RD S( O Lim N) it
0u
s
ID , DRAIN CURRENT (A)
0.5
1m 10 ms 10 0m s 1s 10 s DC
R
s
1m 10
s
ms
0.1 0.05
0.1 0.05
10
0m
s
V GS = 10V SINGLE PULSE
0.01 0.005 1 2
V GS = 10V SINGLE PULSE
0.01 0.005 1
T A = 25C
1s 10 s DC
T A = 25C
2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80
5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
Figure 13. BS170 Maximum Safe Operating Area.
Figure 14. MMBF170 Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
0.2 0.1 0.05
0.2 0.1 P(pk) 0.05
R
R JA (t) = r(t) * R JA JA = (See Datasheet)
t1
0.02 0.01
t2
0.02 0.01 0.0001
Single Pulse
TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
300
Figure 15. TO-92, BS170 Transient Thermal Response Curve.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5 0.2 0.1 0.05
D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk)
R JA (t) = r(t) * R JA R
JA = (See Datasheet)
0.01
Single Pulse
t1
t2
0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2
100
300
Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve.
BS170 Rev. C / MMBF170 Rev. D
TO-92 Tape and Reel Data
TO-92 Packaging Configuration: Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION LOT:
CBVK741B019
HTB:B QTY: 10000
See Fig 2.0 for various Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV: QA REV:
B2
FSCINT Label
(FSCINT)
5 Reels per Intermediate Box F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box
F63TNR Label sample
LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F
Customized Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo Pack Options
Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units
FSCINT Label 327mm x 158mm x 135mm Immediate Box Customized Label 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Intermediate Box
Customized Label
(TO-92) BULK PACKING INFORMATION
EOL CODE J18Z J05Z NO EOL CODE DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX
BULK OPTION
See Bulk Packing Information table Anti-static Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per EO70 box for std option
114mm x 102mm x 51mm Immediate Box
5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label
FSCINT Label 10,000 units maximum per intermediate box for std option
(c)2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style Configuration: Figure 2.0
Machine Option "A" (H) Machine Option "E" (J)
Style "A", D26Z, D70Z (s/h)
Style "E", D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE D74Z (M)
ORDER STYLE D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0
Hd P Pd
b Ha H1 HO d L L1 W1 S WO W2 W
t
t1 P1 F1 P2 DO ITEM DESCRIPTION PO Base of Package to Lead Bend Component Height Lead Clinch Height Component Base Height Component Alignment ( side/side ) Component Alignment ( front/back ) Component Pitch Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness SYMBOL b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S DIMENSION 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max)
User Direction of Feed
TO-92 Reel Configuration: Figure 5.0
Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out
Note : All dimensions are in inches.
ELECT ROSTATIC SEN SITIVE D EVICES
D4
D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
F63TNR Label Customized Label
D2
Reel Diameter Arbor Hole Diameter (Standard) (Small Hole) Core Diameter Hub Recess Inner Diameter Hub Recess Depth Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches
D1 D2 D2 D3 D4 W1 W2 W3
13.975 1.160 0.650 3.100 2.700 0.370 1.630
14.025 1.200 0.700 3.300 3.100 0.570 1.690 2.090
W2
D3
July 1999, Rev. A
TO-92 Package Dimensions
TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.22
* *;
Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code
(c)2000 Fairchild Semiconductor International January 2000, Rev. B
SOT-23 Tape and Reel Data
SOT-23 Packaging Configuration: Figure 1. 0
Customized La bel
Packaging Description:
SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a m ultilayer film (Heat Activated Adhesive in na ture) primarily composed of polyester film, adhesive layer, sealan and an t, ti-static sprayed agent. These reeled pa in stan rd option are shippe with rts da d 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color an is made of polystyrene plastic (antid static coated Othe option comes in 10,000 units per 13" ). r or 330cm diameter reel. This and s ome other options are describe in the P d ackaging Information table. These full reels are individua labele an placed inside lly dd as tanda intermediate made of recyclable corrugated rd brown pap with a Fairchil d logo printing. One pizza box er contains eight reels maximum. And thes intermed e iate boxes are placed inside a labeled shipping box which comes in different sizes depending on t e nu h mber of parts shippe d.
Antistatic Cover Tape
Human Readable Label
Embossed Carrier Tape
3P
SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code ) TNR 3,000 7" Dia 187x107x183 24,000 0.0082 0.1175 D87Z TNR 10,000 13" 343x343x64 30,000 0.0082 0.4006
3P
3P
3P
SOT-23 Unit Orientation
343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label
Human Readable Label sample
H uman readable Label
SOT-23 Tape Leader and Trailer Configuration: Figure 2. 0
187mm x 107mm x 183mm Intermediate Box for Stand Option ard
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 75 empt y poc kets Leader Tape 500mm minimum or 125 empty pockets
(c)2000 Fairchild Semiconductor International
September 1999, Rev. C
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape Configuration: Figure 3.0
P0 T E1 P2 D0 D1
F E2 B0 Wc
W
Tc K0
P1
A0
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-23 (8mm)
A0
3.15 +/-0.10
B0
2.77 +/-0.10
W
8.0 +/-0.3
D0
1.55 +/-0.05
D1
1.125 +/-0.125
E1
1.75 +/-0.10
E2
6.25 min
F
3.50 +/-0.05
P1
4.0 +/-0.1
P0
4.0 +/-0.1
K0
1.30 +/-0.10
T
0.228 +/-0.013
Wc
5.2 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOT-23 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
8mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 4.00 100
Dim W1
0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0
Dim W2
0.567 14.4 0.567 14.4
Dim W3 (LSL-USL)
0.311 - 0.429 7.9 - 10.9 0.311 - 0.429 7.9 - 10.9
8mm
13" Dia
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.0082
(c)2000 Fairchild Semiconductor International
September 1998, Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G


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